1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral latticework, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing extraordinary atomic bond toughness.
The Si– C bond, with a bond power of around 318 kJ/mol, is amongst the greatest in architectural ceramics, conferring superior thermal stability, hardness, and resistance to chemical attack.
This durable covalent network results in a product with a melting point surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical strength and creep resistance at temperatures above 1400 ° C, where lots of metals and standard porcelains start to soften or break down.
Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal cycling without devastating fracturing, a crucial attribute for crucible performance.
These innate residential or commercial properties originate from the balanced electronegativity and similar atomic sizes of silicon and carbon, which advertise a very stable and densely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are typically fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in resilience and thermal shock resistance.
Sintered SiC crucibles are created via solid-state or liquid-phase sintering at temperatures above 2000 ° C, frequently with boron or carbon ingredients to boost densification and grain border cohesion.
This procedure yields a fully dense, fine-grained structure with minimal porosity (
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