titanium nitride melting point, also known as TiN-x, is an inorganic compound composed of titanium and nitrogen. It is characterized by a high melting point, high hardness, good thermal conductivity and chemical stability, and it can be used in high-temperature structural materials.
TiN can be prepared by nitriding titanium metal with carbon, methane, or nitrogen in an air-tight container. It is widely used in the manufacturing of titanium alloys, ceramics and semiconducting instruments.
Nanocrystalline titanium nitride can be synthesized by a convenient process that fully mixes titanium dioxide and carbon powder in proportion. The mixture is heated to 650 degC in an autoclave, where it is converted into cubic titanium nitride.
In electronics, TiN can be used to create conductive barriers between a metal gate dielectric (e.g., HfSiO) and a silicon substrate, in order to improve transistor performance by lowering the leakage current or drive current, while maintaining the same threshold voltage. Thin films of TiN can also be used in copper-based chips, to prevent diffusion of metal into the silicon substrate.
Titanium nitride coatings can be applied on the edges of mechanical molds to prevent corrosion and increase the life of such tools. It is also used in jewelry, medical equipment and the automobile industry as a coating for aluminum and steel parts that require high wear resistance and lubricity.
Titanium nitride is also biocompatible and can be used to make orthopedic prostheses and other surgical tools. It does not react with body fluids, thereby protecting the health of the users.