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Inorganic gallium nitride has the chemical formula GaN. It is made up of gallium, nitrogen and a chemical compound. It is a direct-bandgap semiconductor that has been widely used in light emitting diodes (LEDs) since 1990. This compound has the same structure as wurtzite and is very hard. Gallium Nitride has an energy gap of about 3.4 electron-volts. This can be useful in high-speed and high-power optoelectronic devices. Gallium nitride is used, for instance, in violet lasers. You can use it without nonlinear semi-conductor pumped solid state lasers.
In 2014, Yuki Akasaki, Professor of Nagoya University in Japan as well as Hiroshi Amao, Professor of Nagoya University in Japan won the Nobel Prize in Physics. Shuji Nakamura, Professor of University of California Santa Barbara also received the prize.
Applications of GaN
GaN series has low heat production rate and high electric breakdown field. They are important materials for developing high-temperature and high power electronic devices, as well high-frequency microwave devices.
GaN materials are ideal for light-emitting devices with short wavelengths. GaN, and its alloys, cover a wide range of spectral wavelengths from red through to ultraviolet.
GaN is the hottest area of research in semiconductors. This is a new semiconductor material used for microelectronics and optoelectronics. Along with semiconductor materials, such as SIC or diamond, it’s known as the successor of first-generation Ge and Si.
Semiconductor material, second-generation GaAs materials, InP compounds semiconductor materials, third-generation materials. It has a large bandgap and strong atomic bonds. It also has high thermal conductivity (nearly uncorroded by acid) as well as strong radiation resistance. It’s used in photoelectronics and devices with high temperatures and power.
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