If you are looking for high-quality products, please feel free to contact us and send an inquiry, email: firstname.lastname@example.org
The chemical formula is: The chemical formula of pyridoxine is:
This can be done with diimine.
3Si(NH)2(s) -Si3N4(s) +N2(g) + 3H2(g) (at 1000 degC)
Or, use the carbothermal reduction to synthesize under an atmosphere of nitrogen at 1400-1450degC.
In the 1950s the method for nitriding the elemental silicon was discovered. It was also the first method to mass produce silicon nitride. The silicon nitride powder will be impure if the quality of the silicon is not high.
The diamine method produces amorphous silicon nitride, which must be annealed in nitrogen at 1400-1500degC before it can become crystalline powder. Presently, the diamine-decomposition method has only a limited importance. The commercial production method for silicon nitride comes second to nitriding.
The most cost-effective and easiest way of manufacturing silicon nitride is through the carbothermal reaction.
The film is made by either chemical vapor deposited or plasma enhanced chemical-vapor deposition:
3SiH4(g) + 4NH3(g) -Si3N4(s) + 12H2(g) 3SiCl4(g) + 4NH3(g) -Si3N4(s) + 12 HCl(g) 3SiCl2H2(g) + 4NH3(g) -Si3N4 (s) + 6 HCl(g) + 6H2(g)
Two methods are available to deposit Silicon Nitride on a Semiconductor Substrate:
1. Use vertical or horizontal tube heaters to apply low-pressure, chemical vapor deposition using a relatively high temperature.
2. The plasma-enhanced deposition of chemical vapors is done under vacuum conditions at low temperatures.
The unit cell parameter of silicon nitride is different than that of elemental Silicon. Dependant on the deposition technique, the silicon nitride generated film can either generate tension, or stress. Adjusting the deposition parameter is a great way to reduce tension, especially when using plasma enhanced chemical vapor technology.
To obtain silicon nitride, the first step is to prepare silica using the sol-gel process. Next, the silica containing ultrafine carbon particles will be processed with the carbothermal method of reduction, followed by nitridation. The ultrafine carbon particles are formed by decomposing glucose at 1200-1350degC. The reactions which are part of the synthesis can be:
SiO2(s), C(s), SiO(g), CO(g), SiO(g), 2N2 (g), CO(g), Si3N4 (s), + CO2(g), or Si3N4 (+ CO2(g), or SiO(g), 2N2+ 3C(s), Si3N4+ 3CO2(g),
Processing silicon nitride block
As a granular product, it is difficult to work with. It can’t be heated higher than its melting point (1850degC) because silicon nitride would decompose to silicon and nitrogen. Hot press sintering is no longer acceptable. By adding binders or sintering aids, the powdered silicon nitride can be bonded to form a solid material. Due to the necessity of adding binders or other sintering aids to the material, impurities will be introduced. Another method to produce purer bulk material is spark plasma sintering. The compacted powder will be pulsed within a short period of time (a few seconds). This method works at temperatures between 1500degC and 1700degC. The temperature at which you want to obtain compact and dense lumps of silicon nitride.
(aka. Technology Co. Ltd., a trusted global chemical supplier & manufacturer has over 12 years experience in providing high quality chemicals and nanomaterials. The
Please note that the products produced by our company are of high purity and have low impurities. Please.