Aluminum nitride
It is a covalent bonds compound. The chemical formula for the substance is AlN. Aluminum nitride has a hexagonal structure and wurtzite crystal structures. It is nontoxic, white, or off-white. Aluminum nitride, a ceramic material, has exceptional comprehensive properties.
Aluminum nitride or AlN has the properties of high strength and high volume resistivity. Also, it is thermally expandable to high temperatures. It’s used not only as a sintering agent or reinforcing layer in structural ceramics but also for other purposes, particularly in recent years. It performs far better than alumina in ceramic electronic substrates and packaging material applications.
The Use of Aluminum Nitride
Used to enhance luminescent materials
Aluminum nitride, also known as AlN, has a maximum band gap of 6.2eV. This gives it a higher photoelectric efficiency than indirect band gap semiconductors. AlN, a vital blue- and ultraviolet-emitting material is used in UV/deep ultraviolet light emitting diodes, ultraviolet laser diodes and ultraviolet detectors.
It is used in ceramics, refractory and other materials.
Aluminum nitride can also be used to sinter structural ceramics. You can use the AlN ceramic’s heat resistance and corrosion resistance to make high temperature, corrosion-resistant parts like crucibles and Al evaporate dishes.
For composite materials
As packaging materials, epoxy/AlN materials must be able to dissipate heat and thermally. This requirement is increasing. Epoxy resin, a polymer material, is easy to cure and has low shrinkage. It also has high thermal conductivity. You can increase the material’s strength and thermal conductivity by adding AlN Nanoparticles with high thermal conductivity.
Piezoelectric device application
Aluminum nitride exhibits high resistance, high thermal conductivity (8-10x that of Al2O3) and a similar expansion coefficient to silicon. This is a great material for electronic devices that require high temperatures and high power.
Apply to substrate material
AlN crystal makes a great substrate for AlGaN, AlN, and AlN epitaxial material. AlN and GaN substrates are better than SiC and sapphire. Also, the stress between the substrate (and the epitaxial layers) is lower than SiC.
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