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alumina nitride is a highly insulating and has high thermal conductivity, which makes it an ideal material for sealing semiconductor devices. It is also nontoxic and chemically stable. The combination of these properties has made it a staple in the semiconductor industry. However, the thermal conductivity of alumina nitride can be significantly reduced when it comes in contact with oxygen. In this case, the best alternative is to use alumina nitride filled with nitrogen.
In the group III-nitrides, aluminum nitride (AlN) has a large direct bandgap and higher thermal conductivity than gallium nitride (GaN). One of its unique intrinsic properties is spontaneous polarization, which originates from the strong ionic character of chemical bonds between Al and nitrogen atoms in the wurtzite crystal structure.
Despite its low melting point, AlN is quite strong and can be machined to achieve very tight tolerances using diamond tools. For this reason, it is often used as a replacement for beryllium oxide in high-temperature applications where the electrical properties are critical.
Unlike other oxide-based engineering ceramics, the covalently-bonded AlN is very resistant to oxidation. This makes it an ideal replacement for beryllium oxide, which degrades in air at temperatures above 2000°C. In addition to exhibiting superior thermal conductivity, AlN has excellent dielectric properties. It is a key material for advanced electronics, solar energy and optics. Surmet’s Buffalo, NY facility can synthesize tonnage quantities of the highest quality AlN powder and fabricate fully sintered components in complex shapes for a broad range of industrial and electronic applications.